| PART |
Description |
Maker |
| BFR193W |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
http://
|
| BFR183 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
|
| AT-32063 DEMO-AT32063 |
Low Current, High Performance NPN Silicon Bipolar Transistor(小电流，高性能NPN硅双极型晶体
860兆赫级联放大
|
Agilent(Hewlett-Packard)
|
| BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFP182R |
NPN Silicon RF Transistor
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| BFS480 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR180W) for low noise, low power amplifiers
NPN Silicon RF Transistor NPN硅射频晶体管
|
Infineon Technologies AG
|
| AT-32032 AT-32032-TR2 |
TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 40MA I(C) | SOT-323
Microcurrent transistors for battery operations
Low Current, High Performance NPN Silicon Bipolar Transistor(小电流，高性能NPN硅双极型晶体
|
Agilent(Hewlett-Packard)
|
| AT41485 AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| 2N2857 |
Silicon Bipolar Low Noise microwave Transistors
|
M-pulse Microwave Inc.
|
| AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
